Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

A differential Hall effect technique has been developed to obtain doping profiles at a depth resolution down to 2 nm with junction depths of about 20 nm. We have determined the electrical characteristics of 531014 Sb+ cm−2 implanted in (100) silicon at an energy of 5 keV. A comparison was made between carrier concentration profiles and secondary ion mass spectroscopy measurements of the atomic profiles as a function of annealing temperature. We have profiled single energy implants of antimony and also double implants; the latter enables complete profiles to be measured down to the background level of about 1018 cm−3. © 2004 American Institute of Physics. [DOI: 10.1063/1.1792378]